"We may have the RURP...."


SUNNYVALE, Calif. -- April 1, 1973 -- A team of scientists and engineers from Signetics M.O.S. (Mendacious-Ostreperous Semiconductor) Department announced completion here today of a revolutionary new electronic memory that promises to enhance the general ecology and improve the quality of life for billions of people who are affected by computer data.

The new electronic memory is intended for widespred use in computer conservation, public and private. Samples have already been requested for evaluation by the CCCC, the Government's new Civilian Computer Conservation Corps.

Led by memory expert Dr. John G. Curtis, M.S. (Mnemonic Savant), the science-and-engineering team today publicly unveiled the new invention, known as "write-only memory", or "WOM". Gathered for ceremonies were several of Dr. Curtis' eminent colleagues, including Dr. Manuel Imbroglio, formerly with Fiasco Industries of Milan, Italy; Dr. Morris Breakthrough, a consultant on leave from Uisge Beatha, Ltd., of Kirkcudbrightshire, Scotland; and Dr. Watashiwa Monozuki of Domo Arigato Laboratories, Ltd., Tokyo.

Electronic Ecology

Dr. Curtis explained that his new brainchild can serve as the repository for every imaginable type of information. "In most computer memories," he said, "data is written into storage devices and later, when needed, the data can be read by the computer. Storage devices of this type are known as 'write-and-read' memories, and they are quite common."

"In our new WOM," he contiuned, "data is written but never is read. Thus, the Write-Only memory is ideal for DDS, or Discarded-Data Storage, and in this application, it can enhance the electronic ecology in which we and our computers live, for it keeps things clean and neat."

"In effect," Dr. Curtis added, "the WOM is a solid-state refuse can for used electronic data, and since everything can be reduced to data these days, the WOM can store anything you may wish. Say, for example, that you have had a particularly pleasant experience and would like to preserve it. you merely convert it to data an write it into the WOM."

Ultimate Reality?

Dr. Curtis, who is known to shun the use of hyperbole, stated confidently, after pausing for a moment to lend dramatic emphasis to his words, "We may have the RURP." His colleague, Dr. Breakthrough, explained that the term "RURP" is an acronym formed from the initials of the words "Realized Ultimate-Reality Product", an engineering comcept. "If we do indeed have the RURP", Dr. Curtis continued, "then no further technical progress beyond the WOM will be possible, and you can imagine what that would mean. No progess? Just think of it. It would change our entire way of life."

Asked how he had conceived the idea of the Write-only-Memory, Dr. Curtis said that the principle of the WOM burst upon him last year while he and Dr. Breakthrough were assisting Dr. Ottmar Heissluft catalog a number of relics in Stanford University's Museum of Anthropology.

"I was asked to lecture in the place of Dr. Heissluft," Dr. Curtis said, after explaining that archaeology is one of his burning passions, "and I noticed that all of the sutdents wrote down everythign I said. As it turned out, none of them ever read what they had writen, so I asked myself, 'if they can do it, why can't I do the same thing with computer data?' So, my friends, that was the beginning."

The Wepemnofret WOM

"Before starting the development work, Dr. Breakthrough and Dr. Imbroglio and I made a search of all avaliable literature to determine if anyone had conducted previous work in this field. We were delighted to find that the earliest Write-Only Memory dates back to the 27th century B.C. It is now in the Robert H. Lowie Museum of Anthrolopogy at the University of California at Berkeley and is regarded as the best-preserved example of solig-state memory technology from the Old Kingdom of ancient Egypt."

Dr. Curtis explained that the proto-WOM was uncovered at Giza in 1905. It was reportedly developed by the chief designer on the staff that supported the efforts of Prince Wepemnofret, a higher-ranking member of the family of the Egyptian ruler Cheops. "The ancient WOM's data, which lists the contents of the Prince's tomb, was written i a linear back-information hieroglyphic code that seems to have been the FORTRAN of taht age. A number of Write-Only Memories were used at the time for recording data that was never meant to be read," Dr. Curtis said. "We find many outstanding examples of the pyramidal data non-processing systems (PDNPS) developed by Cheops himself."

Describing the actual development work, Dr. Imbroglio said, "We quickly got a crash program going that resulted in a quantum-jump performance improvement over the Egyptian product, an we are bearish about charging a performance premium. That is, we plan to charge more for our WOM than Wepemnotfret charged for his because ours is better. How much better? Well, the Egyptian WOM hled its data inaccessible for only 5,000 years, but ours is designed for Eternally Inaccessible Storage (EIS). Incidentally, we are now at work on a follow-on product -- a WOM Buffer, known as WOMB, which we expect will be pregnant with possibilities."

Bolonium Ion Implantation

Dr. Imbroglio's claim of higher performance appear just in light of the group's modern production techniques. Dr. Monozuki, an expert on semiconductor materials and production techniques, said that the Eygptian WOM was a relytively crude solid-state device, made from commonly available materisl. The new Signetics WOM, on the other hand, is made by low-speed implantation of the elusive bolonium ion.

"The bolonium ion has played a major, if largely unappreciated, part in scientific an engineering theories for many years," Dr. Monozuki said. "In our production technique, the stability of the bolonium ion and its compounds is enhanced by resonance and other oratorical tactics." He pointed out that the bolonium ion has been used with great financiel success in the semiconductor industry. "Many plants in the industry today use manufacturing equipment which produces little other than flashing lights and bolonium ions to fabricate any semiconductor that you might name."

Although the Signetics group refused to comment, it is generally understood that the company intends to acquire a plant in Italy to express purose of manufacturing bolonium ingots.

Asked to explain briefly how the bolonium ions are implanted, Dr. Monozuki said, "It's beautifully simple. It is based on the amount of unavailable energy in a closed electrodynamic system so related to the state of the overall organization that a change in the measure varies with a change in the ratio of the increment of electromitive force taken in to the absolute voltage at which it is absorbed."

He smiled and added, "In other words, it is the amount of the disorder of a closed electrodynamic system in terms of a constant multiple of the natural logarithm of the probability of the occurrence of a particular molecular arrangement of the system that by suitable choice of a constant reduces to the measure of unavailable energy. Once that has been determined, the bolonium ions are limited and modified by the subsequent phenomenon of linkage so that the corresponding units in a pair of ions unite to form new combinations according to the law of chance."

The Signetics WOM

The Signetics Write-Only Memory is a completely interated solid-state device that employs both enhancement and depletion modes. It is organized to store "N" number of words which consist of 9,046 bits each (the term "N" may equal anything to infinity, and then some). Manufactured by means of uncomplementary MOS technology, the Signetics WOM contains "P" channel ("P" = Pythagorean), "N" ("N" = Napoleonic), and "neu" channel devices. ("Neu" channel devices enhance or deplete, simultaneously or randomly, regardless of gate polarity, but there are occasions when they do absolutely nothign at all.)

Appropriate unsystematic applications of the Signetics WOM might include use in a DC (Don't Care) buffer storage, PM (Post-Mortem) memories for weapon systems, LSC (Least-Significant Control) memories, LORD (Law-and-Order) systems, AMS (artificial memory systems), NMCO (non-intelligent micro-controllers), FINO (first-in never-out -- in reference to data flow) asynchronous buffers, and OBIT (overflow-bit bucket) registers.


Although the Signetics WOM is a static device, a single TTL (Tertullian-Torquemada Logic) clock phase is required to drive the multi-pot clock generator, which is located within the WOM. Data is refreshed during perios of CB (coffee break) and LH (lunch hour). Quadri-state outputs, when provided, allow expansion of a WOM system in many directions, at once, depending on organization.

The WOM's static memory cells are operated dynamically so that power dissipation will remain as low as possible. All inputs and outputs are directly compatible with TTL voltages when proper interface circuitry is employed. In other words, all data and clock inputs and the applicable outputs, when provided, will interface directly or nearly directly with circuits of suitable characteristics. Thus, the WOM is as universal as probably possible whithin definite limits, which must never be exceeded in residential areas. In any event, one-ampere fuses should be used in all data lines and power supply connections.

Write-cycle time is 80 nanoseconds, maximum-typical, and write-access time is not applicable under any circumstances. Under minimally typical conditions, cells can be...


D A T A   S H E E T





The Signetics 25000 Series 9046XN Random Access Write-Only-Memory employs both enhanced and depletion mode P-Channel, N-Channel and neu [1] channel MOS devices. Although a static device, a single TTL level clock phase is required to drive the on-board multi-port clock generator. Data refresh is accomplished during CB and LH periods [11]. Quadri-state outputs (when applicable) allow expansion in many directions, depending on organization.

The static memory cells are operated dynamically to yield extremely low power dissipation. All inputs and outputs are directly TTL compatible when proper interfacing circuitry is employed.

Device constuction is more or less S.O.S. [2].




The use of Signetics unique SEX [7] process yields Vth (var.) and allows the design [8] and production [9] of higher performance MOS circuits than can be obtained by competitor's techniques.


All data and clock inputs plus applicable outputs will interface directly or nearly directly with bipolar circuits of suitable characteristics. In any event use 1 amp fuses in all power supply and data lines.


All terminals are provided with slip-on latex protectors for the prevention of Voltage Destruction. (PILL packaged devices do not require protection).


Low cost silicon DIP packaging is implemented and reliability is assured by the use of a non-hermetic sealing technique which prevents the entrapment of harmful ions, but which allows the free exchange of friendly ions.


Because of the employment of the Signetics' proprietory Sanderson-Rabbet Channel the 25120 will provide 50% higher speed than you will obtain.


The 25120 is easily cooled by employment of a six-foot fan, 1/2" from the package. If the device fails, you have exceeded the ratings. In such case, more air is recommended.



TYPE    "n"    TEMP. RANGE       PACKAGE 
25120    0     0 to -70 grd C    Whatever's Right 



[1] "Neu" channel devices enhance or deplete regardless of gate polarity, either simultaneously or randomly. Sometimes not at all.
[2] "S.O.S." copyrighted U.S. Army Commissary 1940.
[3] Not applicable
[4] You can somehow drive these inputs from TTL, the method is obvious.
[5] Measure at 1 MHz, 25mVac, 1,9 pF in series.
[6] For the filaments, what else!
[7] You have a dirty mind. S.E.X. is Signetics EXtra Secret process. "One Shovel Full to One Shovel Full", patented by Yagura, Keshkook, Converso and Al. Circa 1921.
[8] J. Kane calls it design (we humor him).
[9] See "Modern Production Techniques" by T. Arrista (not yet written).
[10] Final until we got a look at some actual parts.
[11] Coffee breaks and lunch hours.
[12] Due credit to EIMAC for inspiration.


Tel (408) 739-77(x) o TWX (940) 339-9283 o A Subsidiary of CORNING GLASS WORKS

Copyright 1972 - Printed in U.S.A.
D304 MOS- 005-39

Im Januar 2000 gab es eine Überraschung: Der großartige Ingenieur Robert A. Pease von National Semicondutor, dessen Kolumne ich seit Jahren mit Begeisterung lese, hat in seiner neuesten Kolumne in "Electronic Design" einen Link auf meine Site gemacht. Und er hat einen zweiten, zur Site von Ganssle: * Scan des Datenblatts des WOM

Auch diese Site ist sehr zu empfehlen! Des weiteren dieser dortige Link:

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